Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO 2 RRAM and Their Impacts on RTN Amplitude Distribution

An extensive investigation of the preexisting and generated defects in amorphous-Si/TiO2-based nonfilamentary a-vacancy modulated conductive oxide RRAM devices has been carried out in this paper to identify the switching and degradation mechanisms, through a combination of random-telegraph-noise (RTN) and constant-voltage-stress analysis. The amplitude of RTN, which leads to read instability, is a...