Wideband filters on high-resistivity silicon substrate for 5G high-frequency applications

In order to satisfy the requirements on high traffic capacity and high data rate of 5G wireless communications, two wideband RF filters are developed on high-resistivity silicon substrate with MEMS technology for high-frequency base-station applications. A commensurate-line filter is designed for 9 to 15 GHz, with measured in-band insertion loss of 0.8 dB and return loss of 14 dB. A substrate integrated waveguide filter is designed for 25 to 30 GHz. The simulated results satisfy the specifications and the measured ones degrade mainly due to the fabrication of bilayer topology, which will be solved in the near future. Both of them are with compact size and good frequency selectivity.