Importance of ΔVDIBLSS/(Ion/Ioff) in Evaluating the Performance of n–channel Bulk FinFET Devices

Yi-Chuen Eng,Luke Hu,Tzu-Feng Chang,Steven Hsu, Chun Mao Chiou,Ted Wang,Chih-Wei Yang,Osbert Cheng,Chih-Yi Wang,C S Tseng,Ren Huang,Po-Hsieh Lin, Kuan-Yu Lu, I-Fan Chang, Chi-Ju Lee, Yen-Liang Wu, Mike Chang

IEEE Journal of the Electron Devices Society（2018）

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摘要

This paper aims to investigate the recently proposed figure of merit, ΔVDIBLSS/(Ion/Ioff), in detail. Experimental results show that ΔVDIBLSS/(Ion/Ioff) represents the index of device immunity to short-channel effects in bulk FinFETs. The value of its numerator, ΔVDIBLSS, accounts for the drain-induced barrier lowering and subthreshold swing. The value of its denominator, Ion/Ioff, accounts for th...

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关键词

FinFETs,Performance evaluation,Logic gates,Silicon,Leakage currents,Nanoscale devices

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