1200 V GaN vertical fin power field-effect transistors
2017 IEEE International Electron Devices Meeting (IEDM)(2017)
摘要
We demonstrate record performance in a novel normally-off GaN vertical transistor with submicron finshaped channels. This vertical fin transistor only needs n-GaN layers, with no requirement for epitaxial regrowth or p-GaN layers. A specific on-resistance of 0.2 mfì-cm
2
and a breakdown voltage over 1200 V have been demonstrated with extremely high ON current (over 25 kA/cm
2
) and low OFF current at 1200 V (below 10
-4
A/cm
2
), rendering an excellent Baliga's figure of merit up to 7.2 GW/cm
2
. A threshold voltage of 1 V was achieved and was stable up to 150 °C. Large devices with high current up to 10 A and breakdown voltage over 800 V were also demonstrated. These results show the great potential of GaN vertical fin transistors for high-current and high-voltage power applications.
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关键词
vertical fin transistor,n-GaN layers,breakdown voltage,high-voltage power applications,submicron fin-shaped channels,GaN vertical fin power field-effect transistors,normally-off GaN vertical transistor,voltage 1200.0 V,voltage 1.0 V,current 10.0 A,voltage 800.0 V,temperature 150.0 degC,GaN
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