A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor

In this letter, a novel monolithically integrated Si-GaN cascoded FET is designed and experimentally demonstrated for high-voltage power switching applications. The device is formed by monolithically connecting a low-voltage Si MOSFET and a high-voltage normally-on GaN MIS-HEMT on the same substrate in the cascode configuration. The interconnection distance is 50 μm which is only 2.5% of that of t...