Analytical Calculation of Influence of Ferroelectric Properties on Electrical Characteristics Negative Capacitance Germanium FETs

Yue Peng,Genquan Han,Zhibin Chen,Qinglong Li,Jincheng Zhang,Yue Hao

IEEE Journal of the Electron Devices Society（2018）

引用 11|浏览5

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摘要

Negative capacitance (NC) germanium (Ge) p-channel field effect transistors with different ferroelectric parameters are investigated by the analytical model. The channel surface potential amplification induced by the NC effect, which determines the subthreshold swing (SS) and the drain current IDS of the device, can be tuned by varying the thickness tfe, the coercive field Ec, and the remnant pola...

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关键词

Logic gates,Field effect transistors,Capacitance,Ferroelectric films,Hysteresis,Electric potential

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