Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs

Gun-Hee Kim,Hagyoul Bae,Jae Hur,Choong-Ki Kim,Geon-Beom Lee,Tewook Bang, Yoon-Ik Son,Seong-Wan Ryu,Yang-Kyu Choi

IEEE Transactions on Electron Devices（2018）

引用 9|浏览7

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摘要

A highly biased linear current method (HBLCM) for separately extracting source and drain resistance (RS and RD) in MOSFETs is proposed. The technique can be applied to a single device by using simple modeling. Compared to other methods, it provides accurate values of RS and RD because it considers carrier mobility degradation. The method basically uses linear current versus gate voltage (IDS-VGS a...

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关键词

Resistance,MOSFET,Logic gates,Degradation,Mathematical model,Human computer interaction,Electrodes

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