Transport characterization of silicon nanowire field effect transistors with strain and scattering

In this paper, we have investigated the non-ballistic properties of Silicon Nanowire Field Effect Transistor (SiNW-FET) which has significant potential in future nanoelectronic applications. Our first goal is to study the effects of non-ballistic properties like elastic scattering and strain effect. The study reveals that elastic scattering decreases the drain current whereas tensile strain tends to increase it. Secondly, effects of change in drain voltage and temperature on SiNW-FET's non-ballistic I-V characteristics have been studied in this paper. It has been observed that the degree of ballisticity decreases with the increase of temperature for lower drain bias but increases with temperature for higher drain voltage. Finally, we have studied the ballisticity for Carbon Nanotube Field Effect Transistor (CNT-FET). It has been shown that SiNW-FET exhibits better performance than CNT-FET for the combined non-ballistic effects as the degree of ballisticity is higher for the former.