New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs

Yen Kai Lin,Pragya Kushwaha,Juan Pablo Duarte,Huan Lin Chang,Harshit Agarwal,Sourabh Khandelwal,Angada B. Sachid, Michael Harter,Josef S. Watts,Yogesh Singh Chauhan,Sayeef Salahuddin,Chenming Hu

IEEE Transactions on Electron Devices（2018）

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摘要

Anomalous transconductance with nonmonotonic back-gate bias dependence observed in the fully depleted silicon-on-insulator (FDSOI) MOSFET with thick front-gate oxide is discussed. It is found that the anomalous transconductance is attributed to the domination of the back-channel charge in the total channel charge. This behavior is modeled with a novel two-mobility model, which separates the mobili...

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关键词

Silicon-on-insulator,MOSFET,Transconductance,Logic gates,Semiconductor device modeling,Threshold voltage,Electric potential

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