Modulating Pl And Electronic Structures Of Mos2/Graphene Heterostructures Via Interlayer Twisting Angle

Stacking two-dimensional materials into van der Waals heterostructures with distinct interlayer twisting angles opens up new strategies for electronic structure and physical property engineering. Here, we investigate how the interlayer twisting angles affect the photoluminescence (PL) and Raman spectra of the MoS2/graphene heterostructures. Based on a series of heterostructure samples with different interlayer twisting angles, we found that the PL and Raman spectra of the monolayer MoS2 in these heterostructures are strongly twisting angle dependent. When the interlayer twisting angle evolves from 0 degrees to 30 degrees, both the PL intensity and emission energy increase, while the splitting of the E-2g Raman mode decreases gradually. The observed phenomena are attributed to the twisting angle dependent interlayer interaction and misorientation-induced lattice strain between MoS2 and graphene. Published by AIP Publishing.