Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

Daewoong Kwon,Korok Chatterjee,A. Tan,Ajay K. Yadav,Hong Zhou,Angada B. Sachid,Roberto dos Reis,Chenming Hu,Sayeef Salahuddin

IEEE Electron Device Letters（2018）

引用 147|浏览44

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摘要

Negative capacitance (NC) FETs with channel lengths from 30 nm to 50 μm, gated with ferroelectric hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) substrates. Enhanced capacitance due to NC, hysteresis-free operation, and improved subthreshold slope are observed. The NC effect leads to enhancement of drain current for small voltage operation. In addition, impro...

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关键词

Capacitance,Logic gates,Silicon-on-insulator,Field effect transistors,Hysteresis,Performance evaluation

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