Total Dose Effects on Voltage References in 130-nm CMOS Technology

Dalton Martini Colombo, Allan Rosseto,Gilson I. Wirth,Sergio Bampi,Odair Lelis Goncalez

IEEE Transactions on Device and Materials Reliability（2018）

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摘要

This paper investigates the impact of total ionizing dose (TID) effects on the performance of CMOS voltage reference circuits. Four circuits were designed using a commercial 130-nm CMOS process and without any radiation-hardening technique. Two of the designed circuits generate the output voltage proportional to the bandgap voltage, while the other two generate the output voltage proportional to t...

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Logic gates,Threshold voltage,MOSFET,CMOS process,Leakage currents

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