Sol-Gel Processed p-Type CuO Phototransistor for a Near-Infrared Sensor

Solutionp-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties of sol-gel-processed, CuO-based back gate thin-film transistors were investigated, and a detectivity of 1.38 × 1011 (cm Hz1/2 W-1) was achieved. This detectivity for sol-gel-processed CuO thin-film transistors is higher than that of the previously reported layered two-dimen...