A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters
Solid-State Electronics（2018）
摘要
•The band-modulation and sharp-switching mechanisms in Z2-FET device are reviewed.•It offers high current margin, long retention, low operating voltage and high speed.•The main parameters are discussed based on detailed experiments and simulations.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要