Reverse Bias Lifetime Analysis Of 600v Enhancement Mode Gan Devices

This work reports the reliability of Infineon's CoolGaN (TM) 600V Enhancement mode GaN-on-Si transistors under high temperature reverse bias operation. Using the most conservative lifetime model; the extracted lifetime at use conditions of 480V, 125 degrees C at 0.01% failure rate is greater than 70 years. The extracted activation energy (E-a) is 0.77eV with a single failure mode, Drain to Substrate. A common slope factor (beta) of 7.4; suggests an excellent process control.