SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients

Zachary E. Fleetwood,Adrian Ildefonso,George N. Tzintzarov,Brian R. Wier,Uppili S. Raghunathan,Moon-Kyu Cho,Ickhyun Song,Mason T. Wachter,Delgermaa Nergui,Ani Khachatrian,Jeffrey H. Warner,Patrick J. McMarr,Harold L. Hughes,En Xia Zhang,Dale McMorrow,Pauline Paki,Alvin J. Joseph,Vibhor Jain,John D. Cressler

IEEE Transactions on Nuclear Science（2018）

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摘要

The doping profile of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) is modified to enhance inverse-mode (IM) device operation. Device improvements are presented in this paper, along with the impact the alterations have on the radiation effects response. This investigation represents the first published occurrence of a radiation-hardening-by-process approach in a SiGe HBT technol...

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关键词

Silicon germanium,Doping,Heterojunction bipolar transistors,Junctions,Performance evaluation,Germanium,Frequency modulation

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