Effects of Total-Ionizing-Dose Irradiation on Single-Event Response for Flip-Flop Designs at a 14-/16-nm Bulk FinFET Technology Node

Total-ionizing-dose (TID) irradiation affects the single-event (SE) vulnerability of electronics by changing transistor leakage currents and/or effective threshold voltages (VT). Characterization of SE response of flip-flop (FF) designs in a 14-/16-nm bulk FinFET technology after TID exposure has been carried out with alpha particle irradiations. Results show that SE cross section (SECS) first inc...