Frequency Dependence of Heavy-Ion-Induced Single-Event Responses of Flip-Flops in a 16-nm Bulk FinFET Technology

Integrated circuits fabricated at advanced technology nodes are expected to operate in gigahertz range of frequencies. At these frequencies, single-event transient (SET)-induced errors result in significant increases in single-event (SE) cross section for flip-flop (FF) designs. For FinFET transistors, the physical structure has changed significantly from planar structure. These changes have resul...