ZnO-Based Physically Transient and Bioresorbable Memory on Silk Protein
IEEE Electron Device Letters(2018)
摘要
In this letter, physically transient and fully bioresorbable resistive switching devices based on ZnO are proposed, with excellent resistive switching memory performance shown in Mg/ZnO/W and Mg/ZnO/Mg devices. The devices utilize dissolvable metals including Mg and W with biodegradable silk fibroin substrates that can dissolve while immersed in deionized water after 15 minutes and as fast as 5 mi...
更多查看译文
关键词
Zinc oxide,II-VI semiconductor materials,Transient analysis,Substrates,Immune system,Optical switches
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要