Mid-infrared guided photoluminescence from integrated Pr 3+ -doped selenide ridge waveguides

Praseodymium-doped selenide thin films are deposited by radio frequency magnetron sputtering on thermally oxidized silicon wafers and undoped selenide layers. Ridge waveguides are then processed using photolithography and dry etching techniques. Under optical pumping at 1.55 μm, broadband guided mid-infrared photoluminescence is recorded for the first time for wavelengths above 4 μm from rare earth-doped integrated chalcogenides waveguides. Optical design confirmed that these active waveguides allow single-mode optical propagation at a wavelength of 4.70 μm.