Hot-Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact Model

This paper presents a new physical compact model for interface state creation due to hot-carrier degradation in advanced SiGe heterojunction bipolar transistors (HBTs). An analytical model for trap density is developed through an accurate solution of the rate equation describing generation and annihilation of interface traps. The analytical aging law has been derived and implemented in terms of ba...