Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30μm and strip pitch of 55μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2–5 kΩ cm, with a thickness of 300μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.