Influence of oxygen vacancies in ALD HfO 2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO 2-x /Pt structure

Andrey Sergeevich Sokolov,Yu-Rim Jeon,Sohyeon Kim,Boncheol Ku,Donghwan Lim,Hoonhee Han, Myeong Gyoon Chae,Jaeho Lee, Beom Gil Ha,Changhwan Choi

Applied Surface Science（2018）

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摘要

•Oxygen vacancies in ALD HfOx thin film were modulated by varying oxidant pulse time.•Resistive switching behaviors are governed by connection/disruption of filament via reduction/oxidation.•Conduction mechanism clearly depends on amount of oxygen vacancies.

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关键词

Resistive switching,RRAM,Hafnium oxide,ALD,Oxygen vacancies

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