Enhanced scintillation of Ba 3 In(B 3 O 6 ) 3 based on nitrogen doping

Scintillating materials, as a class of luminescent materials, are highly demanded for practical use in the high-energy detection. However, the applications are often hampered by their low light yield (LY) or long decay time for many traditional scintillators. In this work, upon nitrogen anion doping, scintillation performance in layered borate Ba3In(B3O6)3 (BIB) has been excellently enhanced with high XEL intensity of ～3 times as large as that of commercial Bi4Ge3O12 (BGO) and ultra-fast fluorescent decay time of ～1.25ns. To shed light on origins of the intrinsic violet-blue emission, we measured the in-situ vacuum ultraviolet excited (VUV) emission spectra of N-BIB ceramic. Combined with experiments and first principles calculations, the band-gap reduction and donor-acceptor density increasing by nitrogen (N) doping is responsible for the enhancement of scintillation performance for N-doped Ba3In(B3O6)3. Moreover, nitrogen anion doping rather than conventional cation doping is found to be also applicable to other intrinsic luminescent materials for enhancing performance.