A unified aging model with recovery effect and its impact on circuit design

Wai-Kit Lee,Kasa Huang, Li Chung Hsu, Clement Huang, Jim Liang, Julian Chen,Cheng Hsiao,Ke-Wei Su,Chung-Kai Lin,Min-Chie Jeng

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)（2017）

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摘要

In this paper we not only discuss how to implement the recovery effect with TMI but also give various examples to show that without considering the recovery effect, the design margin of a system can be either under- or over-estimated. To validate our modeling methodology, the simulation results are benchmarked with measurement data.

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关键词

TMI,Aging Model,Recovery Effect

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