A 32 kb 9T near-threshold SRAM with enhanced read ability at ultra-low voltage operation

Tony Tae-Hyoung Kim,Zhao Chuan Lee,Anh Tuan Do

Solid-State Electronics（2018）

引用 6|浏览1

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摘要

•A novel 9T SRAM cell is proposed for realizing data-independent bitline leakage.•A bias control mechanism for enhancing bitline sensing margin is proposed.•The proposed control enhances the bitline sensing window.

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关键词

Static random access memory (SRAM),Bitline sensing,Data-independent bitline leakage,MTCMOS

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