TCAD for gate stack optimization in pGaN Gate HEMT devices

pGaN Gate HEMTs are promising normally-OFF transistors for which the use of magnesium (Mg) doping allows the modulation of the threshold voltage (Vth) but at the cost of an ON-state resistance (Ron) degradation. In this study, we propose rigorous TCAD simulations that describe the Mg doping impact on both electrical parameters (Vth and Ron) in agreement with experimental data. We emphasize the importance of TCAD as an additional tool to optimize this Vth-Ron process-window.