Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior Over Wide Voltage and Current Ranges

Hiroyuki Sakairi,Tatsuya Yanagi,Hirotaka Otake,Naotaka Kuroda, Hiroaki Tanigawa

IEEE Transactions on Power Electronics（2018）

引用 93|浏览4

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摘要

This paper presents two novel measurement methods to characterize silicon carbide (SiC) MOSFET devices. The resulting data are utilized to significantly improve the extraction of a custom device model that can now accurately reproduce device switching behavior. First, we consider the Id-Vds output characteristics of power devices such as SiC transistors. These are typically measured using traditio...

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关键词

Silicon carbide,Semiconductor device modeling,Integrated circuit modeling,MOSFET,Mathematical model,Switches,Current measurement

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