Residual stress gradient of Cr and CrN thin films
Materials Chemistry and Physics(2018)
摘要
In this work Cr, CrN thin films were grown by the Magnetron Sputtering technique on monocrystalline silicon (400) substrates. Also, a (Cr/CrN)2 multilayer film was grown in order to compare the values of stress between multilayer and single layers. The total thickness of all films was approximately equal to 1 μm. Structural characterization and residual stress measurements were performed by the grazing X-ray diffraction method and the data were collected at LNLS - Brazilian Synchrotron Light Laboratory. Different angles of incidence were selected in order to obtain values of residual stress at different penetration depths. A linear model of residual stress as a function of the depth profile from experimental data was obtained by using the Laplace transform. Results indicate smaller tensile residual stress at surface and higher stresses at film/substrate interface for the Cr monolayer and for the CrN phase in the (Cr/CrN)2 multilayer. On the contrary, the CrN film presented higher tensile stresses at surface.
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关键词
Residual stress,Thin film,CrN,Cr
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