Assessment of intrinsic small signal parameters of submicron SiC MESFETs

Mohammad Riaz,M. M. Ahmed,Umair Rafique,Umer Farooq Ahmed

Solid-State Electronics（2018）

引用 5|浏览4

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摘要

•Assessment of intrinsic AC parameters of SiC MESFETs using I-V characteristics.•Effects of Schottky barrier depletion layer modification on SiC MESFETs AC parameters.•Evaluation of biased dependent intrinsic AC elements of a high power microwave SiC MESFET.•Assessment of AC performance degradation of a SiC MESFET.

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关键词

Submicron SiC MESFET,Microwave devices,High power MESFETs,AC elements,Simulation and modeling

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