Electron mobility in thin In0.53Ga0.47As channel

Channel thickness T _CH dependence of electron mobility μ _EFF in thin In _0.53 Ga _0.47 As channels was investigated at temperatures T from 35 to 300 K using conventional parametric and pulsed I _D -measurements, including a novel technique with time resolution down to 10 ns. It is show that accurate mobility measurements can be obtained using low T and/or fast pulsed measurements, thus avoiding significant underestimations of μ _EFF due to charge trapping with slow/parametric measurements. Furthermore, annealing is demonstrated to strongly suppress charge trapping, which results in μ _EFF = 1015 cm ² /Vs at T _CH = 7.1 nm, carrier density N _s = 3 × 10 ¹² cm ^-2 , and T = 300 K. We demonstrate that room-temperature μ _EFF degrades by less than 10% as T _CH is scaled from 300 nm down to 7 nm, thus indicating that there is no “mobility bottleneck” down to T _CH = 7 nm.