Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress

The electrical degradation of InAlN/GaN high-electron-mobility transistors for millimeter-wave applications has been examined under simultaneous high VDS,stress and high IDstress electrical stress. Besides a drain current decrease and a positive threshold voltage shift, the creation of an anomalous source-side gate leakage path has been identified. We attribute this to high electric-field induced ...