57.5ghz Bandwidth 4.8v(Pp) Swing Linear Modulator Driver For 64gbaud M-Pam Systems

2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)(2017)

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摘要
A novel series-stacked large swing push-pull MOS-HBT driver was implemented in 55nm SiGe BiCMOS technology. The circuit achieves 4.8V(pp) differential swing, 57.5GHz bandwidth and has an output compression point of 12 dBm per side. 4-PAM and 8-PAM eye diagrams were measured at 56 GBaud for a record data rate of 168 Gb/s. 4-PAM 64GBaud eye diagrams were also demonstrated. The circuit consumes 820/600 mW with/without the predriver, for an energy efficiency of 4.88/3.57 pJ/b.
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关键词
linear modulator driver, push-pull output stage, series-stacked emitter follower, SiGe BiCMOS
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