In situ characterization of radiation sensors based on GaN LED structure by pulsed capacitance technique and luminescence spectroscopy

E. Gaubas,T. Ceponis, D. Meškauskas,J. Pavlov,A. Žukauskas, V. Kovalevskij,V. Remeikis

Sensors and Actuators A: Physical（2017）

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摘要

•Simple re-arrangement of the GaN-based LEDs into radiation sensors.•Simultaneous recording of the electrical and optical response signals.•Techniques for monitoring of the evolution of sensor characteristics during irradiation.•Radiation-hard GaN-LED-based sensors and dosimeters possible for space applications.•Heavily irradiated GaN-LEDs are functional for remote transmission of dosimetry data.

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关键词

Radiation sensors and dosimeters,GaN-LED-based radiation sensors,Pulsed capacitance technique,Luminescence spectroscopy,Current transients,Space dosimetry instrument

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