A Link Between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations
IEEE Transactions on Electron Devices(2017)
摘要
In this paper, we investigate the link between various resistive memory (RRAM) electrical characteristics: endurance, window margin (WM), and retention. For this purpose, several RRAMs are characterized using various resistive layers and bottom electrodes. By focusing on one technology and optimizing programming conditions (current, voltage, and time), we establish a tradeoff between endurance and...
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关键词
Thermal stability,Hafnium compounds,Stability criteria,Microscopy,Programming
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