Sensitive Photoelectric Response to Magnetic Field in p-Type Silicon-Based Structures
IEEE Photonics Technology Letters(2017)
摘要
In this letter, an unpredictable change of magnetism-controlled lateral photovoltaic effect was observed in a well-designed Cu/SiO2/p-Si nonmagnetic structure, which performs better than that in Cu/SiO2/n-Si. When a vertical magnetic flux density changes from 0 to 0.55 T, maximum value of lateral photovoltage drops from 84.3to 31.2 mv. The sensitivity changes 63% and the change rate reaches 290 mv...
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关键词
Magnetic fields,Electrodes,Silicon,Sensitivity,Charge carrier processes,Nanoparticles,Films
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