Junction temperature estimation of IGBT module via a bond wires lift-off independent parameter V gE-np

An electrical method for junction temperature estimation of insulated-gate bipolar transistors (IGBTs) is presented in this study. Owing to the parasitic inductance between bond wire and main emitter terminal LE. The temperature-dependent falling collector current during turn-off transition would cause a negative voltage drop in the gate-main emitter voltage waveform vgE. Therefore, this negative ...