Performance evaluation of screen-printed C-Si solar cells fabricated by the simple and low-cost process

Increase the efficiency and reduce the fabrication cost of silicon solar cells represents a challenge to increase the spread of solar cells on the market, the global economic crisis the focus on reducing the fabrication cost with getting good efficiency have increased. In the present work, Sodium hydroxide (NaOH) or Potassium hydroxide (KOH) were employed to cleaning and remove saw damage from as-cut wafers as potential replacements for time-consuming and expensive standard RCA clean. Also, KOH/IPA texturing process was used to create random pyramid features to reduce reflection as well as enhance light absorption. Furthermore, Back to back (B2B) phosphorous diffusion process was used in the fabrication to form n-type emitter layer at four different diffusion temperatures and designed as the in-situ oxide layer passivation process. In order to avoid wet-chemical step, eliminate the need for anti-reflection coating, and enhance manufacturing process throughput. Also, the effect of different emitter sheet resistance (R-sh) and peak firing temperature of three firing systems on the performance of the cells was investigated. The conversion efficiency, open-circuit voltage (V-oc), short-circuit current density (J(sc)) and fill factor of 10 cm(2) mono-crystalline silicon solar cell fabricated using the above-mentioned processes were a maximum of similar to 13%, 590mV, 29.7mA/cm(2) and 73%, respectively.