RF Performance of In Situ SiN x Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate

A high power-added efficiency and low dynamic on-resistance (RON) AlGaN/GaN metal-insulator- semiconductor high-electron mobility transistor (MISHEMT) with in situ SiNx insulator design was demonstrated on 150-mm silicon-on-insulator (SOI) substrate. Compared to traditional high-resistivity Si substrate, SiNx/AlGaN/GaN MISHEMT grown on the SOI 5-μm-thick Si active layer performed better tensile st...