Low frequency noise in tunneling field effect transistors

S.T. Bu,D.M. Huang,G.F. Jiao, H.Y. Yu,M. F. Li

Solid-State Electronics（2017）

引用 15|浏览34

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摘要

•The low frequency noise in TFET is systematically investigated.•An analytical model for the fluctuation of the potential induced by a single charged trap in TFET is developed.•The available potential model of TFET is modified to be a more practical one.•A low frequency noise model in TFET is proposed.

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关键词

Tunneling field effect transistor (TFET),Interface trap,Potential model,Low frequency noise

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