Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs
Semiconductors(2017)
摘要
The effect of the electrostatic potential induced by charge carriers of the same sign, localized in a deep quantum well, on the current–voltage characteristics of photodetector heterostructures is theoretically analyzed. It is shown for the example of a p–i–n structure with a single deep quantum well in the i -type region that the shielding of an external electric field makes the differential photoconductivity of the heterostructure higher than that in a p–i–n structure without an intermediate 2D layer.
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