A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

Jorge-Daniel Aguirre-Morales,Sebastien Fregonese,Chhandak Mukherjee,Wei Wei,Henri Happy,Cristell Maneux,Thomas Zimmer

IEEE Transactions on Electron Devices（2017）

引用 25|浏览44

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摘要

In this paper, we report a physics-based compact model for monolayer graphene field-effect transistors (m-GFETs) based on the 2-D Density of States of monolayer graphene and the drift-diffusion equation. Furthermore, the Ward-Dutton charge partitioning scheme has been incorporated to the model extending its capabilities to AC and transient simulations. The model has been validated through comparis...

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关键词

Integrated circuit modeling,Graphene,Mathematical model,Charge carrier processes,Charge carrier density,Transistors,Radio frequency

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