W-Band InP HBT Power Amplifiers

Vesna Radisic,Cedric Monier,K. K. Loi,Augusto Gutierrez-Aitken

IEEE Microwave and Wireless Components Letters（2017）

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摘要

This letter reports on two power amplifier (PA) monolithic microwave-integrated circuits operating at W-band. The PAs use 250 nm InP HBTs and thin-film microstrip topology formed with benzocyclobutene dielectric. First PA utilizes a two-emitter finger HBT unit cell with each finger having emitter area of 0.25 × 6 μm2. Second PA power combines two HBT unit cells. Both amplifiers are single stage an...

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关键词

Power generation,MMICs,Heterojunction bipolar transistors,Indium phosphide,III-V semiconductor materials,Power measurement,Area measurement

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