The W oxidation time effect on resistive switching speed in AlOx/WOx-based RRAM

We have proposed two algorithms to demonstrate the relationship between W oxidation time and switching speed in this paper. The demonstration is carried out on a 128Kb test macro of AlOx/WOx bi-layer RRAM which was fabricated with 0.18μm standard logic process. Increasing the W oxidation time properly could achieve a faster switching speed while the overmuch oxidation time will result in performance decreasing. In addition to the switching speed, the oxidation time has no obvious effect on Ron and forming success rate. The typical Roff/Ron resistive window is about 1000× in our work.