Low Noise Voltage Reference For Mems Acceleration Sensor Readout Circuit

Wen-Jie Zhang,Meng-Liang Liu,Liang Xie,Ling-Jie Peng,Xiang-Liang Jin

2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)（2016）

引用 0|浏览1

暂无评分

摘要

A low noise voltage reference is designed in this paper. The voltage reference structure is realized by using a low noise bandgap reference and a low pass filter. A +/- 3.7V voltage reference chip with low noise has been fabricated in a standard CMOS 0.5 mu m technology. By selecting suitable feedback resistance of the amplifier, the two measured results show that the noise of voltage reference VRP is reduced from 82.16 mu V to 8.58 mu V and the noise of voltage reference VRN is reduced from 146.12 mu V to 9.1 mu V.

查看译文

关键词

low noise voltage reference,MEMS acceleration,readout circuit,low noise bandgap reference,low pass filter,reference chip,CMOS technology,feedback resistance,voltage 3.7 V,size 0.5 mum,voltage 82.16 muV to 8.58 muV,voltage 146.12 muV to 9.1 muV

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要