Resistive-Gate Field-Effect Transistor Exhibiting Steep Subthreshold Slope Of Smv/Dec And High I-On/I-Off Ratio

In this paper, a new steep-slope device concept of resistive-gate field-effect transistor (RG-FET), which is operated by electrically induced abrupt resistance change of gate stacks, is discussed in detail and experimentally optimized. The fabricated RG-FET demonstrates both an ultra-steep subthreshold slope of below Sm V/dec over almost 2 decades of drain current and a high on-current competitive with conventional MOSFET. The leakage current of RG-FET is also largely reduced for almost 4 decades by MOSFET component optimization, leading to a high I-ON/l(OFF) ratio of 10(6), which shows that RG-FET is a promising candidate for future low-power electrics applications.