Optically Active Dilute-Antimonide Iii-Nitride Nanostructures For Optoelectronic Devices

We have studied the epitaxy, energy bandgap, and structural and optical properties of GaSbN nanostructures in the dilute antimony (Sb) limit (Sb concentration < 1%). GaSbN nanowire structures are grown on a Si substrate by plasma-assisted molecular beam epitaxy. It is observed, both theoretically and experimentally, that the incorporation of a very small amount of Sb (< 1%) in GaN can substantially reduce the energy bandgap of GaN from 3.4 eV to similar to 2 eV. We have further demonstrated that emission wavelengths of GaSbN nanowires can be tuned from similar to 365 nm to 600 nm at room-temperature by varying the Sb incorporation. Functional GaSbN nanowire light-emitting diodes are also demonstrated, which exhibit strong emission in the deep-visible spectral range. Published by AIP Publishing.