Tradeoff Study of Heat Sink and Output Filter Volume in a GaN HEMT Based Single-Phase Inverter
IEEE Transactions on Power Electronics(2018)
摘要
This paper presents the tradeoff study of heat sink and output filter volume of a GaN HEMT based single-phase inverter. The selected topology is three-level active neutral point clamped (ANPC) inverter, and the main aim is to explore the benefits of the GaN HEMTs at 600 V blocking class on the system level efficiency, and power density under the wide range of operating conditions. The paper starts...
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关键词
Gallium nitride,Inverters,HEMTs,Switches,Logic gates,Heat sinks,Topology
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