Monte Carlo calculation of In0.53 Ga0.47 As and InAs noise parameters
2017 International Conference on Noise and Fluctuations (ICNF)(2017)
摘要
The increase of modern electronics performances depends on the ability to grow high-frequency, low-noise and low-power devices. Nowadays, InP technology is mature and In
0.53
Ga
0.47
As is clearly a material of interest. Moreover, Sb-based devices constitute the next step [1], which makes InAs transport and noise parameters analysis a relevant topic. The difficulties to obtain these quantities through experiments can be overcome by the onset of an appropriate numerical protocol. In this framework, we propose a Monte Carlo calculation of both diffusion coefficient and noise temperature of bulk In
0.53
Ga
0.47
As and InAs within a correlation functions formalism.
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关键词
Monte Carlo calculation,noise parameters,transport parameters,numerical protocol,diffusion coefficient,noise temperature,correlation functions formalism,In0.53Ga0.47As,InAs
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