Nanoscale cross-point diode array accessing embedded high density PCM

The main bottlenecks in the development of current embedded phase change memory (PCM) technology are the current density and data storage density. In this paper, we present a PCM with 4F(2) cross-point diode selector and blade-type bottom electrode contact (BEC). A blade TiN BEC with a cross-sectional area of 630 nm(2) (10 nm x 63 nm) reduces the reset current down to about 750 mu A. The optimized diode array could supply this 750 mu A reset current at about 1.7 V and low off-current 1 x 10(-4) mu A at about -5.05 V. The on-off ratio of this device is 7.5 x 10(6). The proposed nanoscale PCM device simultaneously exhibits an operation voltage as low as 3 V and a high density drive current with an ultra small cell size of 4F(2) (10(8) nm x 10(8) nm). Over 10(6) cycling endurance properties guarantee that it can work effectively on the embedded memory.